Silicon carbide substrate manufacturer SICC Co Ltd, based in Jinan, capital of East China's Shandong province, drew strong attention from global industry players at SEMICON China 2026 in Shanghai, a leading international trade fair for semiconductor technology.

The company's growing global influence is underpinned by its market leadership. According to the latest report, SICC ranked first worldwide in silicon carbide (SiC) substrate market share in 2025. It held a 27.5 percent share of the six-inch segment and captured more than half of the global market for eight-inch products, at 51.3 percent – making it the first Chinese enterprise to lead the high-end sector.

As a core material for third-generation semiconductors, SiC substrates are widely used in emerging industries such as new energy vehicles and photovoltaic energy storage.

SICC's rise to global prominence reflects over 15 years of sustained innovation. The company took leads in the large-scale production of eight-inch products. In 2024, it further strengthened its technological edge by launching the world's first 12-inch SiC substrate.

The company's rapid growth has also been recognized in the capital market. In August 2025, SICC was listed on the main board of the Hong Kong Stock Exchange, becoming the first Chinese SiC substrate company with dual listings on both the A-share market and Hong Kong.

SICC's success highlights Jinan's forward-looking industrial strategy. The city has prioritized the development of the integrated circuit industry, offering strong support in funding, infrastructure, and talent cultivation.

The SICC booth at the SEMICON China 2026 in Shanghai. [Photo/SICC]

The world-leading eight-inch silicon carbide substrate from SICC. [Photo/SICC]